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automotive grade www.irf.com 1 11/10/10 features advanced planar technology low on-resistance dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * specifically designed for automotive applications, this cellular design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. description gds gate drain source absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specificatio ns is not implied.exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ v (br)dss - 55v r ds(on) max. 0.02 ? i d -74a parameter units i d @ t c = 25c continuous drain current, v gs @ -10v i d @ t c = 100c continuous drain current, v gs @ -10v i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy(thermally limited) i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery dv/dt v/ns t j operating junction and t stg storage temperature range soldering temperature, for 10 seconds(1.6mm from case ) mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r jc junction-to-case ??? 0.75 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 -5.0 -55 to + 175 300 10 lbf in (1.1n m) max. -74 -52 -260 mj c a 20 930 -38 200 1.3 20 to-220ab AUIRF4905 d s d g s d g
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& 0#$% 4 (112 "5 static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units v (br)dss drain-to-source breakdown volta g e -55 ??? ??? v ? v (br)dss / ? t j breakdown volta g e temp. coefficient ??? -0.05 ??? v/c r ds(on) static drain-to-source on-resistance ??? ??? 0.02 ? v gs(th) gate threshold volta g e -2.0 ??? -4.0 v g fs forward transconductance 21 ??? ??? s i dss drain-to-source leaka g e current ??? ??? -25 a ??? ??? -250 i gss gate-to-source forward leaka g e ??? ??? 100 na gate-to-source reverse leaka g e??????-100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) q g total gate char g e??????180 q gs gate-to-source char g e??????32nc q gd gate-to-drain ("miller") char g e??????86 t d(on) turn-on dela y time ??? 18 ??? t r rise time ??? 99 ??? t d(off) turn-off dela y time ??? 61 ??? ns t f fall time ??? 96 ??? l d internal drain inductance between lead, nh 6mm (0.25in.) l s internal source inductance from packa g e and center of die contact c iss input capacitance ??? 3400 ??? c oss output capacitance ??? 1400 ??? c rss reverse transfer capacitance ??? 640 ??? pf diode characteristics parameter min. t y p. max. units i s continuous source current (body diode) a i sm pulsed source current (body diode) v sd diode forward volta g e ??? ??? -1.6 v t rr reverse recover y time ??? 89 130 ns q rr reverse recover y char g e ??? 230 350 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) ??? ??? -74 ??? ??? -260 ??? ??? ??? ??? 4.5 7.5 v gs = -10v , see fig.6 and 13 v dd = -28v id = -38a r g = 2.5 ? t j = 25c, i s =-38a , v gs = 0v t j = 25c, i f =-38a di/dt = -100a/ s conditions v gs = 0v, i d = -250a reference to 25c, i d = -1ma v gs = -10v, i d = -38a v ds = v gs , i d = -250a v ds = -55v, v gs = 0v v ds = -44v, v gs = 0v, t j = 150c mosfet symbol showing the integral reverse p-n junction diode. v ds = -25v, i d = -38a i d = -38a v ds = -44v conditions r d =0.72 ? see fig. 10 v gs = 0v v ds = -25v ? = 1.0mhz, see fig.5 v gs = 20v v gs = -20v
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'(')") ! qualification information ? moisture sensitivity level 3l-to-220 n/a qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 (1125v) (per aec-q101-005) rohs compliant yes esd machine model class m4 (425v) (per aec-q101-002) human body model class h2 (4000v) (per aec-q101-001)
www.irf.com 4 *" +, -!." ./ ,& ./ .& 1 10 100 1000 0.1 1 10 100 d ds 20s pulse width t = 25c c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 1 10 100 1000 0.1 1 10 100 d ds a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 20s pulse width t = 175c c 1 10 100 1000 45678910 t = 25c j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) v = -25v 20s pulse width ds t = 175c j 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a v = -10v gs i = -64a d ./ ,&
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0$""1,2% ./ 3&2-! 31- 2 ./ &-! 1- 2 ./ 1 4- 2 0 1000 2000 3000 4000 5000 6000 7000 1 10 100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 40 80 120 160 200 g gs a -v , gate-to-source voltage (v) q , total gate charge (nc) for test circuit see figure 13 i = -38a v = -44v v = -28v d ds ds 1 10 100 1000 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 t = 25c j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) t = 175c j 1 10 100 1000 1 10 100 operation in this area limited by r ds(on) 10ms a -i , drain current (a) -v , drain-to-source voltage (v) ds d 100s 1ms t = 25c t = 175c single pulse c j
www.irf.com 6 12.".& 12."56" 0$""#6.." "78& 0$""&-! &." v ds 90% 10% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 175 0 20 40 60 80 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 3 +13 1 0.1 % 3 3 67 + -
www.irf.com 7 3&2.& 93&256" 0$""%6 #2/ -!& d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - : "656" : "6.& t p v ( br ) dss i as r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v 0 500 1000 1500 2000 2500 25 50 75 100 125 150 175 j e , single pulse avalanche energy (mj) as a starting t , junction temperature (c) i top -16a -27a bottom -38a d q g q gs q gd v g charge '(-
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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period => ??? 3 !#13''
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www.irf.com 10 ordering information base part package type standard pack complete part number form quantity AUIRF4905 to-220 tube 50 AUIRF4905
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unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the ?au? prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are so ld subject to ir?s terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with ir?s s tandard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. exc ept where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products an d applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterati ons is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of thi rd parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or serv ice voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business p ractice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the b ody, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir produc t could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, aff iliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim al leges that ir was negligent regarding the design or manufacture of the product. ir products are neither designed nor intended for use in military/aerospace applications or environments unless the ir products are specifically designated by ir as military-grade or ?enhanced plastic.? only products designated by ir as military-grade meet m ilitary specifications. buyers acknowledge and agree that any such use of ir products which ir has not designated as military-grade is solely at the buyer?s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in c onnection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir product s are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation ?au?. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements for technical support, please contact ir?s technical assistance center http://www.irf.com/technical-info/ world headquarters: 233 kansas st., el segundo, california 90245 tel: (310) 252-7105

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